Abstract
In this paper the authors have investigated the generation of the third harmonic by microwaves, in a homogeneous semiconductor at low temperatures. The effect of ionized impurity scattering has been taken into account and it has been shown that, at low temperatures, the effect of the optical mode of scattering on the amplitude of the third harmonic is small. An approximate solution for the amplitude of the third harmonic part in the reflected and transmitted components of a large amplitude electromagnetic wave, incident normally on a slab of semiconducting material, is obtained, and numerical results have been presented for a few typical parameters It has been shown that a third harmonic of about 12% may be generated in the reflected wave when an incident electromagnetic wave of amplitude 1 e s u. cm-1 is allowed to fall on a typical germanium sample at 77 °K
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
