Abstract
We have studied the effect of microwave radiation (frequency, 2.45 GHz; specific power density, 1.5 W/cm2) on the relaxation of internal mechanical strains in the (i)n-n+-GaAs structures, (ii) Au-Ti-n-n+-GaAs diode structures with Schottky barriers, and (iii) GaAs-based Schottky-barrier field-effect transistors (SFETs). It is shown that exposure of the samples to the microwave radiation for a few seconds leads to relaxation of the internal mechanical strains and improves the quality of the semiconductor surface layer structure. This results in improved parameters of the GaAs-based device structures of both (diode and SFET) types, as manifested by increased Schottky barrier height, reduced ideality factor and back current in the diode structures, and increased gain slope and initial drain current in the SFETs.
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