Microwave response of a magnetic single-electron transistor

Abstract

We consider a single-electron transistor in the form of a ferromagnetic dot in contact with normal-metal and pinned ferromagnetic leads. Microwave-driven precession by the dot induces a pumped electric current. In open circuits, this pumping produces a measurable reverse bias voltage, which can be enhanced and made highly nonlinear by Coulomb blockade in the dot. The dependence of this bias on the power and spectrum of microwave irradiation may be utilized to develop nanoscale microwave detectors analogous to single-electron transistor-based electrostatic sensors and nanoelectromechanical devices.