Microwave resonances in silicon-based single electron transistors

Abstract

Phosphorus-doped silicon is one of the promising silicon-based materials for the potential realisation of a solid-state quantum computer. As a step towards the realisation of this goal, we have studied the response of phosphorus-doped silicon single electron transistors (SETs) to microwave frequency radiation, which might be used to control a quantum bit. The SET source-drain current showed gate-voltage dependent high Q-value resonances as the radiation frequency was swept and interactions between neighbouring resonances were observed as the gate voltage was varied. Pulses of microwave frequency radiation were also coupled to the SET and the amplitude of a high Q-value resonance showed the onset of oscillations as the pulse period increased.