Abstract

InSb nanowires exhibit large g-factor and strong spin-orbit interaction, making them a promising candidate to construct the hybrid QD-cavity architecture to realize the potential strong spin-coupling regime. Here we demonstrate a mechanical transfer technique to align single nanowires with micron accuracy onto prefabricated surface gates followed with one step lithography for the contact electrodes and the microwave cavity. This method ensures a high fabrication yield of hybrid device in which the nanowire interacts with the strongest microwave field. A double QD is formed in the InSb nanowire with local electric gates. The charge state is read out from the amplitude and phase response of resonator as well as the dc transport measurement. The interaction strength between charge dipole and photons are investigated by the dispersive readout measurement.

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