Microwave processing of silicon carbide. CRADA final report

Abstract

A Cooperative Research and Development Agreement (CRADA) between Lockheed Martin Energy Systems, Inc. (LMES) and Dow Chemical Company was initiated on May 3, 1993. (Lockheed Martin Energy Research Inc. (LMER) replaced LMES). The completion date for the Agreement was December 1996. The purpose of this project is to develop microwave processing techniques to produce superior silicon carbide. Sintered silicon carbide is an attractive material for use in high-stress, high-temperature, high-wear, or highly corrosive applications. However, use in these applications has been hampered by a lack of consistency in strength, density, and other physical properties. It is proposed that the enhanced sintering that has been achieved using microwaves in oxide and halide systems be applied to the sintering of these materials to produce a more highly controlled density and microstructure. This will, in turn, increase the strength and Weibull modulus of the sintered body. The use of microwave energy to anneal for a moderate temperature (1,400--1,600 C) anneal in a high vacuum (< 10{sup {minus}4} Torr) results in an improvement in the sintered density and density distribution. These changes in turn result in improved properties of the sintered compacts. Further, scale up of the process has resulted in the routine production of 3 kg components in excess of 4 cm in thickness.