Microwave plasma in situ generation of nitride reagents

Abstract

The in situ generation of hydrazine, the most vigorous reagent for deposition of thin film nitride materials, is accomplished using a method that is compatible with the synthesis of high-purity electronic and photonic materials. In situ generation of hydrazine enhances its utilization as a vapor reagent for catalyzing the nucleation of nanoparticles and low-temperature CVD growth of nitride films and nanowires. Mass spectrometry confirms the production of hydrazine in an ammonia-active nitrogen reagent downstream of a 2450 MHz microwave discharge. The materials chemistry, associated with this process is detailed for the production of a reagent stream containing mixtures of all of the known nitriding reagents including hydrazine.