Abstract
Experimental results are presented for the microwave plasma-assisted dry etching of ultrananocrystalline (UNCD), polycrystalline and single crystal diamond materials. A high-rate and anisotropic etching process is developed using a 2.45 GHz microwave plasma reactor. The plasma discharge in this system measures 25 cm in diameter and is located inside a 30 cm diameter microwave cavity applicator. The system is an electron cyclotron resonance (ECR) plasma source operating at pressures of 1–100 mTorr. The process chemistries include mixtures of oxygen, sulphur hexafluoride, and argon. Anisotropic etching profiles have been demonstrated and the measured etching rates range from 4–26 μm/h.
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