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Abstract
Indium-tin oxide (ITO) is widely used as a transparent electrode for optoelectronic devices given its large transparency and high conductivity. However, the particular properties of this material greatly depend on the overall fabrication process. We report on the effect of four different postfabrication processes on ITO thin films grown by electron beam evaporation. More specifically, the effect on the overall properties of the evaporated ITO thin films of microwave plasma annealing, rapid thermal processing, and the two processes combined were analyzed. In particular, the morphological, chemical, optical, and electrical properties of the annealed ITO thin films were studied. The experimental results show that the ITO thin films can be turned from opaque to transparent, and their conductivity can be improved by one order of magnitude depending on the particular postfabrication process.
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