Abstract
The microwave performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization yielded devices with an f/sub max/ of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPWs) were fabricated on substrates with resistivities from 4 to 4000 Omega -cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000- Omega -cm float-zone substrate.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
