Abstract
The incorporation of silicon-buffer layers is shown to be critical in attaining optimized microwave performance for GaAs on silicon MESFETs. A current gain cutoff frequency (f/sub t/) of 18 GHz and maximum power cutoff frequency (f/sub max/) of 30 GHz is reported for relaxed geometry devices. The low parasitic capacitance and excellent device isolation make this structure suitable for monolithic integration. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
