Abstract
, , compounds on GaAs substrates are important materials that are used as Schottky layers in microwave transistors. This study systematically explores the electrical characteristics of various enhancement-mode pseudomorphic high electron mobility transistors (E-mode pHEMTs) with , , Schottky layers. These E-mode pHEMTs were fabricated using a high-selectivity succinic acid solution for gate recess and buried-Pt gate technology. The E-mode pHEMT has a Schottky diode turn-on voltage of . The corresponding values for and E-mode pHEMTs are 0.72 and , respectively. Because a larger can be obtained at the interface, the E-mode pHEMT also more effectively confined carriers and yielded a higher sheet charge density than other Schottky materials. Based on these measured results, this E-mode pHEMT is more appropriate for microwave low-noise and high-power device applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
