Abstract
We report on the microwave performance and reliability evaluation of AlInAs/GaInAs/InP HEMTs with InP as a top surface layer grown by MOCVD. It is found that HEMTs with thin InP surface layers provide high threshold voltage uniformity, and less thermal and bias stress degradation compared to conventional AlInAs/GaInAs/InP HEMTs. A cutoff frequency fT of 53 GHz and maximum frequency fmax of 210 GHz for a 0.4 μm gate device is obtained. ©1999 John Wiley & Sons, Inc. Microwave Opt Technol Lett 20: 357–362, 1999.
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