Abstract
A new microwave field effect transistor (FET) utilising direct Schottky gate contacts to the edge of a two-dimensional electron gas is described. Multi-channel two dimensional MESFETs having 48 parallel half-micron channels (24 /spl mu/m total width) were fabricated on a double-/spl delta/-doped Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.18/Ga/sub 0.82/As/GaAs heterostructure and exhibited f/sub T/ and f/sub max/ of 14 and 45 GHz, respectively.
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