Abstract
In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark different low-noise technologies has been discussed. Following this, basic concepts related to thermal noise in FETs and the reason why such technologies feature outstanding low-noise performance was illustrated/ and a short survey of minimum NF evolution has been presented. InP HEMT technology undoubtedly constitutes the best low-noise technology (especially to address applications in W or G Band). The noise performance of silicon MOSFET technology/ which is widely used in many applications because of its low cost, does not outperform that of GaAs pHEMT technology/ unless channel engineering is performed.
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