Abstract
Abstract Microwave multipolar plasmas (MMP) are plasmas confined by a multipolar magnetic field and excited by 2.45 GHz microwaves. Two main features distinguish MMP's from conventional plasmas: the plasma excitation is disconnected from the plasma-surface interaction and the absence of self-bias leaves the user in control of the substrate bias and ion impact energy. Microwave excitation is applied in three ways: localized (i.e., conventional) electron cyclotron resonance (ECR), surface wave, and distributed ECR (DCER). All three methods have been used to understand the etching of silicon by fluorine. Silicon homoepitaxy on 100 mm wafers is successful down to 400°C in silane MMP's excited by DECR.
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