Abstract
Ferrite devices can be loosely classified into three different categories, namely: control components using polycrystalline ferrites, tunable filters and oscillators using YIG spheres, and devices based on epitaxial YIG or ferrite films. Ferrite control components such as circulators, isolators, and switches are used in almost all microwave and millimeter wave systems. Tunable YIG sphere devices see more limited use in radar and EW systems, and microwave test equipment while epitaxial YIG devices have yet to make a significant systems impact. GaAs chips for phased array modules are under development by several companies for both radar and EW applications. The GaAs chips can contain small signal and power gain, phase shifters, filters, mixers, and switches. The modules are usually designed, however, with discrete circulators or isolators which are often significantly larger than the MMIC chips. Further reduction in module size and cost will require the design of the module without nonreciprocal components, or the development of ferrite devices which are more compatible with the size, bandwidth, and fabrication of the GaAs device. Integration of nonreciprocal ferrite components on the GaAs chip could have a large impact but presents a significant challenge both in terms of processing compatibility between the ferrite and the GaAs and in terms of cost. The impact in the areas of tunable YIG filters and oscillators and MSW devices are smaller but, fortunately, so are the difficulties. Here the YIG films or spheres, or hexagonal ferrite films can be laid on the GaAs substrate thus forming a hybrid device. Having integrated the ferrite with the GaAs it is necessary to consider the magnetic bias field requirement. Bias fields are not required in latching devices and can be minimized in other devices by use of hexagonal ferrite films with their large anisotropy fields. It may even be possible to integrate a permanent magnet film onto the GaAs chip.
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