Abstract

In the work monolithic structures of yttrium iron garnet (YIG, Y3Fe5O12) with a thickness of about 2 μm were obtained on ferroelectric ceramic substrates based on PbZr0.45Ti0.55O3 (PZT) and Ba0.4Sr0.6TiO3 (BST). The Y3Fe5O12 layer was deposited by ion beam sputtering deposition on substrates 400 μm thick by sputtering a polycrystalline Y3Fe5O12 target with with argon ions. The heterostructures were crystallized by annealing in air at a temperature of 820 °C for 5 min. The results of the characteristic X-ray radiation method showed that the elemental composition of the monolithic heterostructure corresponds to the specified one. During X-ray studies, it was found that the YIG crystallization process is completed and the resulting structure is single-phase. The results of magnetic and ferromagnetic resonance studies indicate the possibility of using the obtained heterostructures in logic circuits based on spin waves with low scattering, in memory elements, as well as in electrically controlled microwave devices.

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