Abstract
The nitridation behavior of Si under a microwave-heating source was studied. Si preforms were produced via an aqueous gel-casting route with 45 vol.% solids loading. Preforms up to 10 mm thick could be produced without cracking. Microwave nitridation of the Si preforms was carried out using a fiberboard insulation box without packing powders in order to cause an inverse temperature gradient. Nitridation began at the unusually low temperature of 950°C. Up to 74% nitridation was achieved by nitriding at 1120°C for 5 hr. Preforms displayed an inverse temperature gradient, with sintering and melting occurring in the center of the preforms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
