Microwave Hall conductivity of the two-dimensional electron gas in GaAs-AlxGa1-xAs.

Abstract

For the first time the quantum Hall effect was observed in ${\ensuremath{\sigma}}_{\mathrm{xy}}$ at microwave frequencies in the two-dimensional electron gas in GaAs-${\mathrm{Al}}_{0.35}$${\mathrm{Ga}}_{0.65}$As using a crossed waveguide arrangement. These frequencies were ${10}^{3}$--${10}^{4}$ higher than those used in previous experiments where a so-called low-frequency breakdown of the integer quantum Hall effect was observed. Our microwave results show that this effect does not occur in GaAs-${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As heterostructures. Therefore, we have to rule out the mechanism of an effective delocalization at low frequencies and the existence of long semiclassical orbits in the sample.