Abstract
AbstractThe theory of free carrier Faraday effect in anisotropic semiconductors, previously developed by Donovan and Webster [1,2], is extended to the case of n‐type silicon. The high‐frequency magnetoconductivity tensors are derived taking into account the detailed structure of conduction band. The Faraday rotation measurements in some [111] oriented samples of n‐silicon are performed at room temperature and microwave frequencies. These results and the results of previous workers with different orientation of silicon samples, show reasonable agreement with the theory.
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