Abstract
Abstract Microwave methods for thin ferroelectric film parameter investigations are classified, discussed and improved. Being non-electrode and in some cases non-contact these methods are non-destructive and the information about parameters of films can be obtained from a distance and even during the technological process. High-resistivity silicon or semi-insulated gallium arsenide wafer adds little to microwave absorption or reflection. On the contrary, the crucial factor for the latter is the ferroelectric film with its microwave dielectric dispersion. It is assumed that some of microwave methods would be used in various stages of ferroelectric-semiconductor device characterisation.
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