Abstract
Microwave emission from n-InSb at 77°K in the presence of electric and magnetic fields was studied. Rectangular InSb samples were cut so that the long dimension and the applied electric field were paralletl o one of the crystallographic axes 〈100〉, 〈110〉, or 〈111〉 and so that the position of all other axes was known. It was observed that instabilities in the voltage across the InSb sample accompanied the microwave emission and that, for a limited range of electric and magnetic fields, these instabilities were in the form of coherent oscillations. Both effects showed their lowest electric field thresholds when the magnetic field was parallteol one, but not a specific one, of the crystallographic axes. Both effects were showton occur at electric fields below those expectedf or an electron-hole plasma and a close correspondence between the two effects was demonstrated.
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