Abstract
We present the first direct electron spin resonance (ESR) on a 2D electron gas in a III – V semiconductor. ESR on a high mobility 2D electron gas in a single AlAs quantum well reveals an electronic g -factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimal linewidth of 7 Gauss. Both the signal amplitude and its dependence on the position and orientation of the sample in the cavity unambiguously demonstrate that the spin transitions in our experiment are caused by the microwave electric field. We present a model that ascribes the spin transitions to the effective magnetic field acting on the electron spins that arises from (Bychkov–Rashba) spin-orbit interaction and the modulation of the electron wavevector around k F induced by the microwave electric field.
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