Microwave dielectric properties of Ba(SnxZn(1−x)/3Nb(1−x)2/3)O3 (0 ⩽ x ⩽ 0.32) ceramics

Abstract

The dielectric properties of the (1−x)Ba(Zn1/3Nb2/3)O3−xBaSnO3 (0 ⩽ x ⩽ 0.32) composition at microwave frequencies were investigated in this study. With the addition of BaSnO3, the dielectric Q(Qd) value of Ba(Zn1/3Nb2/3)O3 (BZN) can be improved and a small temperature coefficient of resonant frequency (τf) can be achieved. When 22.6 mol % of Sn is added to BZN, the characteristics of the Ba(Sn0.226Zn0.258Nb0.516)O3 ceramics sintered at 1500°C are as follows: dielectric constant er = 32, τf = + 12 p.p.m.°C1 and high Qd value of 9700 at 10 GHz. Based on the classical dispersion theory and the logarithmic mixing rule, the effects with additions of substitutional element of BaSnO3 on the microwave dielectric properties of Ba(Zn1/3Nb2/3)O3 can be mostly explained.