Abstract

Zn2SiO4 ceramics are important candidates for microwave dielectric materials applied in wireless communication. However, the appearance of the second phase and stomatal impurity affect the microwave dielectric properties. In this work, Zn2SiO4 ceramics were prepared by the conventional solid-state process under different temperatures according to Zn-deficient formula to suppress the formation of secondary phase. X-ray diffraction showed peaks that coincide with those of Zn2SiO4 PDF card standard without secondary phase. Scanning electron microscopy revealed that there were uniform crystal grains at 1300 °C, and larger grains sizes yielded smaller pore gaps. The dielectric properties of Zn1.8SiO3.8 ceramics sintered at 1300 °C were estimated to er = 6.451, Q*f = 102,807 GHz, and τf = -32 ppm/°C.. In summary, Zn1.8SiO3.8 ceramics had potential applications in wireless communication technology due to their excellent dielectric property.

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