Abstract
A novel low-εr Zn3Ga2SnO8 ceramic was prepared, and the phase composition and microstructural evolution were investigated. According to Rietveld refinement, TEM, and Raman spectroscopy, Zn3Ga2SnO8 ceramics had a cubic spinel structure in which Zn1 occupied the tetrahedral sites, and Zn2/Ga1/Sn1 occupied the octahedral sites. The relative density and packing fraction significantly influence the εr and Q × f of Zn3Ga2SnO8 ceramics, respectively. Meanwhile, the P–V–L theory indicates that the contribution rate of Sn–O bonds to bond ionicity is 29.2 %, and that of Ga–O bonds to lattice energy is 37.5 %. The Zn3Ga2SnO8 ceramics exhibit the best microwave dielectric properties (εr = 10.6, Q × f = 88,725 GHz, and τf = −25.1 ppm/°C) when sintered at 1320 °C. Given these advantages, Zn3Ga2SnO8 ceramic has certain potential applications in millimeter-wave technology.
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