Abstract
A non-destructive and easy to use method is presented to characterize p-type and n-type silicon semiconductor wafers using a rectangular dielectric waveguide measurement (RDWG) system. The measurement system consists of a vector network analyzer (VNA), a pair of coaxial cable, coaxial to waveguide adapter and dielectric-filled standard gain horn antenna. In this method, the reflection and transmission coefficients, S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> and S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> were measured for silicon wafer sandwiched between the two Teflon, the dielectric that filled the standard gain horn antenna. It was observed that, the dielectric constant of the silicon wafers are relatively constant, varying slightly over the frequency range of 9 to 12 GHz. The loss factor, loss tangent and conductivity of the doped wafers are higher than the undoped type
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