Abstract
The authors present the DC, microwave, and millimeter-wave characteristics of different quantum well injection transit time (QWITT) diodes. Small-signal and large-signal device models are used to provide physical device design parameters to maximize output power density. A peak output power of 1 mW in the frequency range of 5-8 GHz has been obtained from a planar QWITT oscillator. In addition, millimeter-wave oscillations at 28-31 GHz in a full-height waveguide circuit with an output power of 30 mu W have been obtained. Results on improving device efficiency by optimizing the design of the drift region through the use of a doping spike are also presented. By optimizing the doping concentration, and width of the doping spike, an increase in efficiency from 2% to 5% is obtained, without compromising on output power at X-band. >
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