Abstract
Experimental results obtained with an Xband reflection amplifier using vapour-phase epitaxial GaAs p–n junctions biased into avalanche breakdown are presented. Single-side-band noise figures of 17dB, power gains in excess of 30dB, and a high dynamic range have been repeatedly measured. The noise figures obtained with a large number of these diodes are significantly lower than those reported for Si or Ge diodes.
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