Abstract

Microvoids in amorphous silicon (a-Si:H) and amorphous silicon germanium (a-SiGe:H) alloys are measured by positron annihilation spectroscopy (PAS). Undoped films are prepared by RF and microwave plasma-enhanced chemical vapor deposition methods. Depth dependent information is obtained for microvoids (atomic vacancy-type defects). The microvoids are 50 Å 3 in all the μ-wave samples, and 60 Å 3 in the RF samples as bulk values. The microvoids decrease in size from the bulk values to the minimum values near the surface. Doppler broadening spectra were obtained on a-Si:H solar cells. They show individual line-shape parameters S and positron diffusion lenghts L in each layer. Changes in positron annihilation by light illumination in solar cells are also observed.

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