Abstract
Variously shaped shells were fabricated from strained ZnTe/CdTe/CdHgTe/HgTe/CdHgTe heterofilms that contained a HgTe quantum well populated simultaneously with electrons and holes. The radius of curvature of formed tubes proved to be 12 µm and the period of corrugations about 20 µm. Such a curvature induces a 1.2% deformation in the HgTe layer sufficient for the occurrence of notable band-edge shifts in this layer and causes a transition of the band structure from a semiconductor to a semi-metal state. Curved HgTe-based films offer potential in studying surfaces where topological insulating states are interfaced with semiconductor states.
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