Microtemperature photothermal excitation of semiconductor material influenced by electromagnetic Hall current and variable thermal conductivity

Abstract

The effects of fluctuating thermal conductivity and Hall current in an elastic semiconductor material is studied. When the thermal conductivity is assumed to be a linear function of temperature, the medium is exposed to a very high magnetic field. It is investigated how the elastic medium's microstructure and the external magnetic field interact. The photothermal excitation mechanisms are the setting in which the microtemperature effect is produced. For a semiconductor rod, the overlapping of elastic, magnetic, plasma, and thermal waves is addressed in one dimension (1D). The governing equations of the microtemperature field are solved using the Laplace transform and a specific map in 1D. Analytically and in the physical time domain, the principal physical quantities in this phenomenon have their exact solutions. In the framework of the recombination plasma process, some mechanical boundary conditions with thermal shock are applied at the free surface of the elastic medium. To acquire the complete solutions of the major physical quantities, the Laplace transform is inverted and employed as a numerical method. Under the influence of fluctuating thermal conductivity in Hall current and the microtemperature effect, certain comparisons are done for the physical values that are shown graphically and theoretically addressed.