Microstructuring of p-Si(1 0 0) by localized electrochemical polishing using patterned agarose as a stamp

Abstract

Localization of electrochemical polishing using patterned agarose has been employed to fabricate microstructures on p-Si(1 0 0). The patterns were first transferred from a master to an agarose stamp, and then the microstructures were fabricated by limiting electrochemical polishing in the small contact area between the stamp and the workpiece. The gel stamp acts as the current flow channel between the working electrode and the counter electrode, simultaneously directing the electrolyte to the preferential parts of the Si workpiece. Microstructures fabricated by partial anodic dissolution on p-Si are approximately the same as those on the master. Lateral deviation of the fabricated microstructures from those on the master is approximately 2.6% and the electrochemical etching rate in HF is around several micrometers in an hour. This newly developed technique can be used as a low-cost and simple approach to fabricate microstructures on p-Si with high fidelity at a fast rate.