Abstract
Microstructures in epitaxial, lateral overgrown (ELO)-GaN were analyzed by cross-sectional transmission electron microscopy with recent to the behavior of threading dislocations and generation of horizontal dislocations (HDs). GaN was grown by two-step ELO technique controlling the facet planes. The side facets of the ELO-wing were controlled to have vertical { 2 1 1 ̄ 0 } planes or slanting { 2 1 1 ̄ 2 } planes. It was clarified that the mask size had an effect on microstructures in ELO-GaN. In the case of narrow mask (window/terrace) of (3/3) μm, the c-axis of GaN was not tilted, and the area with low dislocation density was over the mask-terrace. In the case of the wide mask of (3/7) μm, HDs are generated due to the internal stress accumulated during the lateral growth and the location of HDs depended upon the direction of side facets.
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