Abstract
Series of a-Si:H/a-SiNx multilayers were prepared by very high frequency plasma enhanced chemical vapor deposition system. As-deposited samples were thermally annealed at the various temperatures. The effects of thermal annealing on the properties of luminescence were investigated. The photoluminescence intensity of the film annealed at 600 °C is found to be higher than that of the film without annealing. However, with further increasing the annealing temperature from 600 °C to 800 °C, the photoluminescence intensity of the film rapidly decreases. Fourier transform infrared spectroscopy and Raman-scattering spectroscopy were used to study the changes of the microstructures and bonding configurations. Based on the measurements of structural and bonding configurations, the improved photoluminescence intensity is attributed to the forming of radiative defect states caused by the effusion of hydrogen in the films.
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