Abstract
Co50−XMXPt50 (M=Cu or Ru) films were magnetron sputtered on textured Pt(111) underlayer on glass substrate at 350°C. The results show that perpendicular magnetic anisotropy of superlattice L11 phase can be maintained well with doping Cu element into CoPt film. Out-of-plane coercivity (Hc⊥) was also increased with the increase of Cu content. However, disordered A1(111) structure and lower Hc⊥ were obtained with the addition of Ru element in CoPt film. The magnetic force microscopy images indicated that doping Cu diminished the domain size. Oppositely, doping Ru made the domain reversed incompletely. Surface morphology of Co24Cu26Pt50 thin film was much smoother than that of Co23Ru27Pt50 thin film, indicative of maintenance of the epitaxial growth of L11(111) from flat Pt(111) underlayer. The transmission electron microscopy (TEM) images show that the Cu element could be incorporated in L11 CoPt grains; however, the RuPt alloy was segregated at CoPt grain boundary. The cross section TEM pictures showed that the columnar structures starting from Pt(111) underlayer and extending into magnetic CoCuPt(111) layer confirmed that epitaxy existed at CoCuPt/Pt interface. Our research demonstrates that replacing Co with Cu=23–26at.% effectively increases the perpendicular magnetic properties of L11 CoPt phase, which largely increase the potential of L11 films for the application of perpendicular magnetic media and advance spintronic device.
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