Abstract
A series of (La1-xBxMnO3) (LaB6)-based composite films were prepared by a combined magnetron sputtering and ion implantation method, and their structure-function relationship have been investigated. After B3+ ion implantation, the as-sputtered LaMnO3 films still have perovskite structure and good surface flatness. However, the substitution and doping of B ions play the role of resistance regulation, and the formation of the second phase LaB6 reduces the resistivity of the film after ion implantation to a certain extent. The carrier concentration of the ion injected film will decrease from 1.33 × 1016 cm−3 to 1.80 × 1015 cm−3, while the resistivity value will a significant increase from 46 Ω cm to 381 Ω cm with slight variations in principle in thermal constant from 2229 to 2783 K. The secondary phase doping of (La1-xBxMnO3) (LaB6)-based perovskite materials bring an innovative perspective to the design and application of electronic materials.
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