Abstract
ZnO single crystal materials irradiated with 200 MeV energy 86Kr17+ ions have been analyzed by a series of theoretical calculations, Raman spectroscopy and TEM tests, etc. After irradiation by 200 MeV 86Kr17+ ions, two broad vibrational absorption peaks appeared and there is no obvious change in other characteristic peaks. By measuring the Raman spectra of the incident light perpendicular to and parallel to the z axis of the crystal, it was proved that the vibration absorption peak of 526 cm−1 ∼ 600 cm−1 is caused by defects related to oxygen vacancy (VO). The experimental data fully proved that ZnO single crystal has good radiation resistance. These data are of great significance for the application of ZnO materials in various new devices in the future.
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