Abstract
Single-grain Y123/211 TSMG bulks with holes parallel to thec-axis were successfully grown. We show that the growth is more perfect when the seed is positionedin such a way that the growth sector boundary does not meet the holes. Collision of thea-growth sector with the hole leads to the formation of closeda-growth subsectors and does not disturb the growth front of a 123 crystal. Microstructureanalysis reveals significant reduction of sample porosity, formation of a 211 lowconcentration layer and a subgrain free region along the hole. Isothermal oxygenation at440 °C induces a circular stress field along the holes, whose tangential component is responsible for radialc-cracking starting at the surface of the hole. The stress field formationalong the holes during the oxygenation was confirmed by the observationof a symmetric twin complex pattern around the holes. The radialc-cracks degrade the trapped field of the sample, which is apparent in the measured trappedfield profile.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
