Abstract

The development of thin film microstructure is described by particle energy and substrate temperature. Giving an average particle energy is necessary but not sufficient for describing additional effects. Comparing titanium thin film deposition by ion beam sputtering (IBS) with additional reflected primary ions and vacuum arc deposition (VAD), a similar columnar microstructure is observed. However, the oxide formation and interface reaction, which are dominated by bulk transport processes are considerably enhanced for IBS, compared to VAD (and bulk Ti), despite the lower average particle energy in the former case. A causal correlation with damage formed by reflected high energy ions is proposed.

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