Abstract
Wafer bonding is of interest for the bonding of similar and dissimilar materials to create novel structures. Since the first use of the technique for creation of silicon-on-insulator structures, there have been a variety of applications such as the formation of p-n junctions, GaAs/Si, Si/glass, MOSFETs and capacitors. The present study was performed to evaluate interfacial regions of Si-wafers bonded by proximity-adhesion. The microstructure and behavior of the Si-wafers and the interfacial-layers was of interest.The conditions investigated in this study consisted of silicon bonded to silicon possessing hydrophobic surfaces, silicon bonded to silicon in the presence of native-oxide layers, and silicon bonded to silicondioxide/ silicon wafers. The Si-wafers were {100} lightly doped n-type, or {111} and n/n+ (Float-zone/ Czochralski). Cross-section TEM specimens were prepared in the <110> substrate-geometry. These were then analyzed using bright-field, dark-field and weak-beam images under varying conditions of electron-beam tilt. A JEOL JEM 200CX transmission electron microscope was used for analysis, operating at 200 kV.
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