Abstract
Ion beam induced epitaxial crystallization of 300–350 nm thick amorphous Si by 1 MeV N + ions in the temperature range of 200–400 °C was investigated. The dynamic thickness recovery as a function of temperature was observed using Rutherford backscattering spectrometry-channeling. The regrowth rate showed Arrhenius behavior with an activation energy of 0.29 ± 0.03 eV. Using micro-Raman Spectroscopy the crystalline Si peak at 521 cm −1 was found to decrease, broaden and shift to the lower wave numbers as the temperature decreased from 400 to 200 °C. The bond angle deviation below 3.5° suggests the phase change from amorphous to crystalline structure during ion beam induced recovery process. The asymmetric broadening of the Raman peaks at 250 and 300 °C along with TEM micrograph indicates the coexistence of nano-crystalline structures embedded in the amorphous Si matrix.
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