Microstructure of interface between Si chip and tape-type Ag nanoparticle sheet

Abstract

A Ag nanoparticles-based technology for joining semiconductor materials through sintering has been developed. Currently, a paste consisting of Ag nanoparticles is used for die bonding in the electronics industry. A binder-free Ag nanojoining material has been developed for fabricating electronic devices. In this study, we investigated the joining ability of this binder-free tape-type Ag nanojoining material with respect to Si chips. A paste-type Ag nanojoining material that contained an organic binder was also investigated for comparison. The microstructures of the Si-joining material interfaces were observed using a focused ion beam system. The cleaved surfaces of the joints were observed using scanning electron microscopy. High-quality joints that contained only a few pores could be formed between a Au thin film electroplated on the Si chip and the tape-type material after sintering, owing to the simplicity of the joining process and the binder-free nature of the joining material.