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Abstract
Selective-area CBE growth of GaAs on (100) GaAs substrates has been achieved using focused XeCl (308 nm) excimer laser assistance. The highest selectivity, at the growth rates used ( approximately 1 mu m h-1), occurred when the substrate temperature was <400 degrees C and the laser fluence was approximately 90 mJ cm-2. GaAs grown by laser-assisted CBE was found to contain dislocation tangles and to have an associated regular ripple structure on a scale of 300 nm.
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