Abstract
The microstructure of the CrAs GaAs eutectic directionally solidified by both the Czochralski (Cz) and vertical Bridgman (VB) methods consists of arrays of CrAs rods oriented along the axis of solidification in a GaAs matrix. Microdefects in Cz material including striations, terminations and nucleations, coalesence and branching, and oscillatory instabilities are prevalent and are the result of dynamic morphological adjustment under fluctuating conditions of microscopic solidification. In contrast, selected regions of VB material exhibit near-ideal hexagonal packing of circular rods in the matrix. Cause-effect relationships between microstructure and conditions of solidification were determined and are presented and discussed.
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