Abstract
We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was [1100]. The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 109 cm-2. However, owing to dislocation annihilation, the TD density decreased to 108 cm-2 at a thickness of ∼5 µm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (T ≈1200 °C, nitrogen pressure = 1 atm).
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
