Abstract
We used electron cyclotron resonance plasma-excited molecular beam epitaxy (ECR-MBE) to grow A-plane (110) InN on nitridated R-plane (102) sapphire and then measured the structural properties using transmission electron microscopy (TEM). We determined the epitaxial relationship between A-plane InN and R-plane sapphire to be (110)InN // (102)sapphire and [100]InN // [110]sapphire. Moreover, the results indicated that the nitridation of the sapphire produced a (001) cubic AlN layer, and this layer caused the subsequent InN to have its a-axis normal to the interface. Also, by using two diffraction vector orientations in the TEM measurement, we found that dislocations with a screw component had a density of about 5 × 1010 cm–2, which is about ten times higher than that with an edge component. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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