Microstructure of a bearing-grade silicon nitride

Abstract

The microstructure of a bearing-grade silicon nitride, prepared by pressureless sintering with Y2O3, AlN, and TiO2 additives and then hot-isostatically pressed, is examined with high-resolution transmission electron microscopy, scanning electron microscopy, and x-ray diffraction. The material consists of large acicular β–Si3N4 grains and small equiaxial α–Si3N4 grains. An amorphous phase containing the sintering aids is observed at the two-grain boundaries and at the grain pockets. No crystalline boundary phase is identified. The α-to-β and β-to-β grain boundaries appear straight and well defined. The dominant crystalline planes observed at the β-grain boundaries are (1010) and (1120). The intergranular spacing of the two-grain boundaries (α-to-β and β-to-β) is 1.0 nm when a high-contrast boundary phase is present, and it is 0.8 nm when a low-contrast boundary phase is present, confirming that the film thickness is strongly dependent on the boundary-phase composition. The α-to-α boundaries are often curved, and the thickness of the amorphous film at these boundaries varies from 0.7 to 1.1 nm. Evidence of near-intimate contact between β-grains is also observed.