Abstract
Alumina films have been synthesized by ion beam assisted deposition (IBAD). X-ray photoelectron spectroscopy (XPS) and Rutherford back-scattering (RBS) analysis show that films synthesized by IBAD are stoichiometrical Al 2O 3 films. Transmission electron microscopy (TEM), atomic force microscopy (AFM), and X-ray diffraction analysis (XRD) have been applied to characterize the microstructures and morphologies of Al 2O 3 films and their annealing behaviors. We have found that the films are dominated by amorphous Al 2O 3 phase when the substrate temperatures are lower than 500 °C. The path of phase transition of film is amorphous Al 2 O 3 → 800 ° C/6 h rgamma -Al 2 O 3 → 1000 ° C/6 h γ-Al 2 O 3+ α-Al 2 O 3 → 1200 ° C/2 h α-Al 2 O 3 . The film morphology is related with the phase transition of films during annealing.
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